Low Temperature Crystallization Behavior of .ALPHA.-Si3N4 from Ti-Doped Amorphous Silicon Nitride Derived from Polytitanasilazanes-Reference-Cited by-同舟云学术

Low Temperature Crystallization Behavior of .ALPHA.-Si3N4 from Ti-Doped Amorphous Silicon Nitride Derived from Polytitanasilazanes

Published:2006 Issue:1330 Volume:114 Page:502-506
ISSN:0914-5400
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

SATO Koji¹,SAITOH Tomohiro¹,NAGANO Takayuki¹,IWAMOTO Yuji¹

Affiliation:

1. Japan Fine Ceramics Center

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

http://www.jstage.jst.go.jp/article/jcersj/114/1330/114_1330_502/_pdf

Reference18 articles.

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2. A silicoboron carbonitride ceramic stable to 2,000°C

3. 5) Ruwisch, L., “Synthese und Hochtemperaturverhalten borhaltiger Silicium-carbonitride,” PhD. Thesis, Technische Universität Darmstadt, Darmstadt, Germany, July 17, 1998.

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