Electrical properties, characterization, and preparation of composite materials containing a polymethacrylate with α-naphthyl side group and nanographene fillers

Abstract

2-(Naphthalene-1-yl oxy)-2-oxoethyl methacrylate (NOEMA) was synthesized from reaction of naphthalene-1-yl 2-chloroacetate and sodium methacrylate and its homopolymer was prepared by free-radical polymerization method at 60°C. The glass transition temperature of pure poly(NOEMA) was estimated as 102°C by differential scanning calorimetry technique, whereas that of poly(NOEMA) containing 10 wt% nanographene was 83°C. While pure poly(NOEMA) from thermogravimetric analysis measurements was indicating a decomposition at 290°C, poly(NOEMA) composite containing 10 wt% nanographene showed thermal decomposition temperature at 261°C. Semiconducting composites of poly(NOEMA) have been prepared by adding nanographene particles to poly(NOEMA) for preparing nanocomposites with different weight percentages (2, 3, 4, 5, and 10 wt%). The dielectric constant, ∊′, and dielectric loss factor, ∊″, of pure poly(NOEMA) were 3.66 and 0.052, respectively, whereas those of poly(NOEMA) containing 10 wt% nanographene were 186 and 210,152, respectively. Alternating current (AC) conductivity of pure poly(NOEMA) was 2.03 × 10−9 S cm−1, whereas that of poly(NOEMA) containing 10 wt% nanographene was 0.00134 S cm−1. AC conductivity mechanism of poly(NOEMA)/10 wt% nanographene composite indicated the correlated barrier hopping model. Activation energy values of poly(NOEMA)/ x wt% nanographene composites was estimated to be between 4.783 eV and 0.209 eV. The polymer composite/p-Si thin-film heterojunction diode properties have been investigated from current–voltage at room temperature. The electrical parameters of the prepared diodes such as ideality factor ( n), the barrier height (BH; Φ b), rectification ratio, and reverse saturation current ( I o) were investigated at dark and room temperature. The ideality factor ( n) value of the Al/poly(NOEMA)/ x wt% nanographene/p-Si/Al diode for dark was found to be between 5.147 and 7.504, respectively. The BH ( Φ b) value of the Al/poly(NOEMA)/ x wt% nanographene/p-Si/Al diode at dark was found to be between 0.228 and 0.64.