First principles study of photogalvanic effect of monolayer SnS-Reference-Cited by-同舟云学术

First principles study of photogalvanic effect of monolayer SnS

Published:2022-01 Issue: Volume:12 Page:184798042210982
ISSN:1847-9804
Container-title:Nanomaterials and Nanotechnology
language:en
Short-container-title:Nanomaterials and Nanotechnology

Author:

Yu Deyang¹²,Hu YangYang¹³,Ku Ruiqi²⁴,Zhang Guiling¹³^ORCID,Li Weiqi²⁴⁵⁶,Jiang Yongyuan²⁴⁵

Affiliation:

1. School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin, China

2. School of Physics, Harbin Institute of Technology, Harbin, China

3. Key Laboratory of Green Chemical Technology of College of Heilongjiang Province, Harbin University of Science and Technology, Harbin, China

4. Technology Innovation Center of Materials and Devices at Extreme Environment, Harbin, China

5. Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin, China

6. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China

Abstract

The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.

Funder

National Natural Science Foundation of China

Publisher

SAGE Publications

Subject

Electrical and Electronic Engineering,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://journals.sagepub.com/doi/pdf/10.1177/18479804221098299

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