Development of CdS/CdTe Diode for X-Ray Sensor
Author:
Shams H.1, Gabal H. Abou1, Soliman M.2, Ebrahim S.2, Agamy S.1
Affiliation:
1. Nuclear and Radiation Engineering Department, Faculty of Engineering, Alexandria University, Alexandria, Egypt. 2. Materials Science Department, Institute of Graduate Studies and Research, Alexandria University, Alexandria, Egypt
Abstract
Many methods are used to detect x-ray are incapable of accounting for the high x-ray flux generated by modern x-ray Instruments. The major technology for measurement of x-ray dose rate in real time is the ionizing chambers detectors, but it has some disadvantages like complexity. Also it has large size due to the importance of gas volume and pressure, high voltages, signal cables, and other specialized parts needed for its operation. Advances in the technology of CdTe semiconductor in solar cells industries allow the development of an inexpensive and compact solid-state X-ray sensor. As X-ray photons pass through the diode, the photoelectric effect produces a photocurrent. The X-ray flux can be determined from this current. Four stacked diodes were connected in series to measure the device performance. It was observed that amplitude of the pulse formed due to exposed FTO/CdS/CdTe/Mo detector to X-ray of 33 keV and 1mA intensity is 1.03 V
Publisher
World Scientific and Engineering Academy and Society (WSEAS)
Subject
Electrical and Electronic Engineering
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