Electrical Properties of CdFeSe, CdMnTe Epitaxial Films

Author:

M. A. Mehrabova1,N. H. Hasanov2,V. G. Guluzade3,R. M. Sadigov4

Affiliation:

1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, 1143, B.Vahabzade, 9, Baku, AZERBAIJAN

2. Baku State University, 1148, Z.Khalilov, 23, Baku, AZERBAIJAN

3. Azerbaijan Technical University, 1073, H. Javid ave. 25, Baku, AZERBAIJAN

4. Institute of Physics, Azerbaijan National Academy of Sciences, 1143, H.Javid ave. 131, Baku, AZERBAIJAN

Abstract

Optimal conditions of obtaining perfect Cd1–xFexSe (x<0.08) and Cd1-xMnxTe (x=0.15) epitaxial films are defined. The electrical properties of Cd1–xFexSe (x<0.08) and Cd1-xMnxTe (x=0.15) epitaxial films have been studied at room temperature. It was defined that Cd1–xFexSe semimagnetic semiconductor epitaxial films are of n-type and Cd1-xMnxTe p-type. Electrical resistivity was defined 14.4 ·107 Ohm⋅cm. The effect of γ-irradiation on VAC of Cd1-xMnxTe epitaxial films is studied at doses Dγ ≤ 1.5 кGy.

Publisher

World Scientific and Engineering Academy and Society (WSEAS)

Subject

Electrical and Electronic Engineering

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