Wideband Chebyshev Impedance Transformer Set with Very Low Reflection Coefficient-Reference-Cited by-同舟云学术

Wideband Chebyshev Impedance Transformer Set with Very Low Reflection Coefficient

Published:2023-11-07 Issue: Volume:22 Page:135-141
ISSN:2224-2864
Container-title:WSEAS TRANSACTIONS ON COMMUNICATIONS
language:en
Short-container-title:

Author:

Ramírez Karol Yamel Bautista¹,Andrade-Gonzalez Edgar Alejandro¹,Reyes-Ayala Mario¹,Ramírez Hector Bolivar Olmos¹,Guzmán Gerardo Salgado¹,Luna José Ignacio Vega¹,Sánchez Sandra Chávez²,Terres-Peña Hilario²

Affiliation:

1. Department of Electronics, Metropolitan Autonomous University, MEXICO

2. Department of Energy, Metropolitan Autonomous University, MEXICO

Abstract

In various electronic and electrical devices for communication systems, impedance transformers with wide bandwidths are important. In this article, Chebyshev impedance transformers for ohmic loads with order 3 are presented at different frequencies and load impedance values using Duroid and FR4 substrates (εr = 2.2 and εr = 4.4 respectively). Simulated results are shown using the software Advanced Design System (ADS). The thickness of the substrate for FR4 dielectric material is 1.544 mm and for Duroid material is 1.27mm. The matching transformers were performed at 1 GHz, 1.5 GHz, 2 GHz, and 1.5 GHz for two load impedance 100 Ohms and 75 Ohms from 50 Ohms showing a reflection coefficient Γm = 0.05. The S11 scattering parameter was obtained.

Publisher

World Scientific and Engineering Academy and Society (WSEAS)

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Computer Science Applications

Reference14 articles.

1. Chen W. K., “Broadband Matching: Theory and Implementations,” World Scientific Publishing, USA, 2016.

2. Yuqiang X., Xiuping L., Qingwen L. and Zihang Q., “A direct analytical and exact synthesis for multi-section impedance transformers,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 31, No. 12, pp. December 2021.

3. Pérez J. M., Torres A. E., Gonzalo R. and Ederra I, “A Chebyshev Transformer-Based Microstri-to-Groove-Gap-Waveguide Inline Transition for MMIC Packaging,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 9, No. 8, pp. 1595-1602, August 2019.

4. Orfanidis S. J., “A Two-Section Dual-Band Chebyshev Impedance Transformer,” IEEE Microwave and Wireless Components Letters, Vol. 13, No. 9, pp. 382-384, September 2003.

5. Pérez J. M., Rebollo A., Gonzalo R. and Ederra I, “An Inline Microstrip-to-Waveguide Transition Operating in the Full W-Band Based on a Chebyshev Multisection Transformer,” 2016 10th European Conference on Antennas and Propagation (EuCAP), April 2006.