High-Power AlGaInN LED Emitter for Solid-State Lasers Pumping
-
Published:2023-12
Issue:06-2023
Volume:
Page:50-56
-
ISSN:2541-9935
-
Container-title:Light & Engineering
-
language:en
-
Short-container-title:L&E
Author:
Aladov Andrey V.1, Zakgeim Alexander L.1, Ivanov Anton E.1, Chernyakov Anton E.1
Affiliation:
1. Federal State Budgetary Institution Scientific and Technological Centre for Microelectronics and Submicron Hetero-structures of the Russian Academy of Sciences
Abstract
The work is devoted to the creation and study of high-power AlGaInN LED source with emission wavelengths (460–480) nm for pumping of solid-state lasers. The electrical, spectral, power and thermal characteristics were studied in a wide range of currents, continuous and pulsed modes. The design of LED matrices, which provides a tight “packing” of LEDs, their electrical commutation, efficient heat removal and a power supply for a wide pulse range has been proposed.
The developed emitter comprises the most powerful and efficient to date LE Q8W (Osram) LEDs and is intended primarily for pumping Ti:Sapphire laser, the absorption band of which is well matched with the emission spectrum of the used LEDs. The achieved optical pumping power density in the pulsed mode is ~25 W/mm2, which corresponds to the lasing threshold.
Publisher
Redakcia Zhurnala Svetotekhnika LLC
Reference23 articles.
1. 1. Alferov, Zh.I., Andreev, V.M., Garbusov, D.Z., Davidyuk, N. Yu, Larionov, V.R., Pashinin, P.P., Prokhorov, A.M., Rumyantsev, V.L., Tuchkevich, V.M, Khaleev, M.M. Model of semiconductor pumping of a YAG: Nd laser based on flat LEDs in the AlAs-GaAs system [Model’ poluprovodnikovoy nakachki YAG: Nd lazera na osnove ploskikh svetodiodov v sisteme AlAs-GaAs] // Zhurnal Tekhnicheskoy Fiziki, 1997, 45(2), p. 368. 2. 2. Farmer, G.I., Kiang, Y.C. Low‐current‐density LED‐pumpinged Nd: YAG laser using a solid cylindrical reflector // J. Appl. Phys., 1974, Vol. 45, # 3, pp. 1356–1371. 3. 3. Zakgeim, A.L., Makushenko, Yu..M., Marahonov, V.М., Nikishin, S.A., Seysyan, R.P. Increasing the emission power of YAG-based lasers with a semiconductor pump system [Povysheniye moshchnosti izlucheniya OKG na osnove AIGs poluprovodnikovoy sistemoy nakachki] // Pisma v Zhurnal Tekhnicheskoy Fiziki, 1978, 4, (12), 699. 4. 4. Galkin, S.L., Zalgeim, A.L., Markhonov, V.M., Nikolaev, V.М., Pavlyuk, А.А., Petrovich, I.P., Petrun’kin, V. Yu., Skadarevich, А.P., Yarzhemkovskii, V.D. Crystalline KGd (WO4)2 laser with a semiconductor pump system // Journal of Applied Spectroscopy, 1982, Vol. 37, # 2, pp. 886–888. 5. 5. Moulton, P.F., Cederberg, J.G., Stevens, K.T., Foundos, G., Koselja, M., Preclikova, J. Optimized In-GaN-diode pumping of Ti: sapphire crystals // Optical Materials Express, 2019, Vol. 9, # 5, pp. 2131–2146.
|
|