Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD-Reference-Cited by-同舟云学术

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Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD

Published:2005 Issue:11 Volume:71 Page:1393-1398
ISSN:1881-8722
Container-title:Journal of the Japan Society for Precision Engineering, Contributed Papers
language:
Short-container-title:Journal of the Japan Society for Precision Engineering, Contributed Papers

Author:

OHMI Hiromasa,KAKIUCHI Hiroaki,NAKAHAMA Yasuji,EBATA Yusuke,YASUTAKE Kiyoshi,YOSHII Kumayasu,MORI Yuzo

Publisher

Japan Society for Precision Engineering

Reference20 articles.

1. Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's

2. In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films

3. Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition

4. Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

5. 5) 近藤道雄, 鈴木すすむ, 北河敏久, 松田彰久 : プラズマCVDを用いた低温ポリシリコンの高品質化と高速堆積技術, 信学技報, ED2000-2, SDM2000-2, (2000) 7.

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