Application of ECR Plasma to Optical Semiconductor Device Process

Author:

AMAZAWA Takao

Publisher

Japan Society for Precision Engineering

Subject

Mechanical Engineering

Reference10 articles.

1. 1) S. Matsuo, M. Kiuchi and T. Ono: ECR Low-Energy Ion Equipment and Its Application to Deposition and Etching: Proc. 10th Symp., Ion Sources and Ion-Assisted Technology '86, Tokyo, (1986) 471.

2. 2) T. Ono, C. Takahashi and S. Matsuo: Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering, Jpn. J. Appl. Phys., 23, 8 (1984) L534.

3. 3) T. Ono, H. Nishimura, M. Shimada and S. Matsuo: Electron Cyclotron Resonance Plasma Source for Conductive Film Deposition, J. Vac. Sci. Technol., A12, 4 (1994) 1281.

4. 4) M. Shimada, T. Ono, H. Nishimura and S. Matsuo: Application of Electron Cyclotron Resonance Plasma Source to Conductive Film Deposition, J. Vac. Sci. Technol., A13, 3 (1995) 815.

5. 5) K. Saito, H. Takagi, T. Takahashi, T. Nozaki and S. Matsuo: Wide ECR Plasma Source by Parallel Introduction of Synchronized-Phase Microwaves for Large Area Substrates, Proc. the 11th International Display Workshops (IDW '04), SID, (2004) 611.

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