Silicon Device Backside De-Processing and Fault Isolation Techniques-Reference-Cited by-同舟云学术

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Silicon Device Backside De-Processing and Fault Isolation Techniques

Published:2019 Issue: Volume: Page:323-334
ISSN:
Container-title:Microelectronics Failure Analysis
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Author:

Tom Tong Xianghong,Chuang Wen-hsien,Ju Ryu Hyuk,Joshi Prasoon,Xu Di,Cook Steven R.,Huening Jennifer J,Wang Yunfei,Zhao Shuai,Deshpande Piyush Vivek,Ma Zhiyong

Publisher

ASM International

Reference15 articles.

1. Electron beam probing of active advanced FinFET circuit with fin level resolution;Tom

2. Electron beam probing of active advanced FinFET circuit with fin level resolution;Boit;Silicon Debug and Diagnosis,2008

3. Electrical Fault Isolation by Electron-Based Technology;Rao;Microelectronics Failure Analysis Desk Reference,1999

4. Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology;Dickson,2010

5. Special Techniques for Backside Deprocessing;Prejean;Microelectronics Failure Analysis, Desk Reference,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. E-beam Probing: A High-Resolution Technique to Read Volatile Logic and Memory Arrays on Advanced Technology Nodes;2021 IEEE Physical Assurance and Inspection of Electronics (PAINE);2021-11-30

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