Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits-Reference-Cited by-同舟云学术

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Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Yong Cai ,Zhiqun Cheng ,Wilson Chak ,Wah Tang ,Chen K.J.,Kei May Lau

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609468.pdf?arnumber=1609468

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel GaN Gate Driver: Transistor-Intrinsic Integration Exploiting Non-Ideal Characteristics by Device-Circuit Co-Design;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Methodology of Circuit Modeling of Charge-Sensitive Amplifiers Based on Wide-Band-Gap (GaAs, GaN) D-FETs;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

3. Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering;Applied Physics Letters;2013-01-28

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