2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications-Reference-Cited by-同舟云学术

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2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Lee Myoung-Jae,Park Youngsoo,Kang Bo-Soo,Ahn Seung-Eon,Lee Changbum,Kim Kihwan,Xianyu Wenxu.,Stefanovich G.,Lee Jung-Hyun,Chung Seok-Jae,Kim Yeon-Hee,Lee Chang-Soo,Park Jong-Bong,Baek In-Gyu,Yoo In-Kyeong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04419061.pdf?arnumber=4419061

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