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Alternative metals for advanced interconnects

Published:2014-05 Issue: Volume: Page:
ISSN:
Container-title:IEEE International Interconnect Technology Conference
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Author:

Adelmann Christoph,Wen Liang Gong,Peter Antony Premkumar,Siew Yong Kong,Croes Kristof,Swerts Johan,Popovici Mihaela,Sankaran Kiroubanand,Pourtois Geoffrey,Van Elshocht Sven,Bommels Jurgen,Tokei Zsolt

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6826038/6831822/06831863.pdf?arnumber=6831863

Cited by 86 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films;Chemistry of Materials;2024-08-21

2. Cu1−xAlx films as alternatives to copper for advanced interconnect metallization;Journal of Vacuum Science & Technology B;2024-06-18

3. Evaluation of vapor pressure of MoO2Cl2 and its initial chemical reaction on a SiO2 surface by ab initio thermodynamics;Current Applied Physics;2024-05

4. CuTi as Potential Liner- and Barrier-Free Interconnect Conductor;IEEE Transactions on Electron Devices;2024-05

5. Electrical behavior of ALD-molybdenum films in the thin-film limit;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

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