High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction With Spin-Hall Assistance-Reference-Cited by-同舟云学术

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High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction With Spin-Hall Assistance

Published:2015-11 Issue:11 Volume:51 Page:1-4
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Deng Erya,Wang Zhaohao,Klein Jacques-Olivier,Prenat Guillaume,Dieny Bernard,Zhao Weisheng

Funder

ANR-DIPMEM

China Scholarship Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/7305868/07132762.pdf?arnumber=7132762

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Area-Efficient Low-Power Fully Non-Volatile Full-Adder using Reconfigurable Logic;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. On the Layout-Oriented Investigation of Power Attack Hardness of Spintronic-Based Logic Circuits;Circuits, Systems, and Signal Processing;2024-01-31

3. An Energy Efficient, Mismatch Tolerant Offset Compensating Hybrid MTJ/CMOS Magnetic Full Adder;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-11

4. Fully Nonvolatile Hybrid Full Adder Based on SHE+STT-MTJ/CMOS LIM Architecture;IEEE Transactions on Magnetics;2022-09

5. Differential spin Hall MRAM based low power logic circuits and multipliers;Semiconductor Science and Technology;2022-05-23

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