A new gate driver circuit for improved turn-off characteristics of high current IGBT modules-Reference-Cited by-同舟云学术

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A new gate driver circuit for improved turn-off characteristics of high current IGBT modules

Published: Issue: Volume: Page:
ISSN:
Container-title:Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242)
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Author:

Weis B.,Bruckmann M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5899/15733/00730280.pdf?arnumber=730280

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances;IEEE Access;2024

2. Advanced Gate Drive Approaches for Optimal Device-Level Control;Control of Power Electronic Converters and Systems;2018

3. Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation;Nuclear Engineering and Technology;2017-02

4. Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring;IET Power Electronics;2013-09

5. Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings;IEEE Transactions on Power Electronics;2012-03

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