High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules-Reference-Cited by-同舟云学术

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High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

Published:2008-10 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE Industry Applications Society Annual Meeting
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Author:

Berning David W.,Duong Tam H.,Ortiz-Rodriguez Jose M.,Rivera-Lopez Angel,Hefner Jr. Allen R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4658787/4658788/04659153.pdf?arnumber=4659153

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations;Electronics;2024-04-13

2. High dv/dt immunity, high insulation voltage, ultra-compact, inductive power supply for gate-drivers of wide-bandgap semiconductor switches;Journal of Power Electronics;2022-04-25

3. A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers;Electronics;2021-01-13

4. Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor;Japanese Journal of Applied Physics;2018-03-09

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