A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$ </tex-math> </inline-formula> Technology-Reference-Cited by-同舟云学术

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A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13- $\mu\text{m}$ Technology

Published:2018-07 Issue:7 Volume:65 Page:2139-2150
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Hou Zhang Ju^ORCID,Yang Yang^ORCID,Chiu Leung,Zhu Xi,Dutkiewicz Eryk^ORCID,Vardaxoglou John C.,Xue Quan^ORCID

Funder

Fundamental Research Program of Shenzhen City

National Key Basic Research Program of China (973 program)

Australian Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/8369410/08233134.pdf?arnumber=8233134

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3. A 120-to-142-GHz Compact Balanced Power Amplifier Utilizing Novel Slow-Wave Coupled Line in 40-nm CMOS;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

4. An X-Band Class-B Push-Pull Power Amplifier on a 0.25 μm SiGe-C Process;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04

5. D-Band On-Chip Couplers With Multilayered Slow-Wave Unit Cell in Standard CMOS Process;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-09

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