A Volterra-Based Procedure for Multi-Port and Multi-Zone GaN FET Amplifier CAD Simulation-Reference-Cited by-同舟云学术

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A Volterra-Based Procedure for Multi-Port and Multi-Zone GaN FET Amplifier CAD Simulation

Published:2013-11 Issue:11 Volume:60 Page:3022-3032
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Crespo-Cadenas Carlos,Reina-Tosina Javier,Madero-Ayora Maria J.,Allegue-Martinez Michel

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/6646285/06496167.pdf?arnumber=6496167

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Floating-Domain Integrated GaN Driver Techniques for DC–DC Converters: A Review;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-09

2. A Bivariate Volterra Series Model for the Design of Power Amplifier Digital Predistorters;Sensors;2021-09-02

3. Upgrading Behavioral Models for the Design of Digital Predistorters;Sensors;2021-08-08

4. A bivariate Volterra series approach to modeling and linearization of power amplifiers;2021 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2021-01-17

5. Efficient Digital Predistortion Using Sparse Neural Network;IEEE Access;2020

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