A 2.12-V $V_{pp}~11.67$ -pJ/pulse Fully Integrated UWB Pulse Generator in 65-nm CMOS Technology-Reference-Cited by-同舟云学术

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A 2.12-V $V_{pp}~11.67$ -pJ/pulse Fully Integrated UWB Pulse Generator in 65-nm CMOS Technology

Published:2020-03 Issue:3 Volume:67 Page:1058-1068
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Gao Shengkai^ORCID,Moez Kambiz^ORCID

Funder

China Scholarship Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/9014409/08932665.pdf?arnumber=8932665

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the influence of gas ionization on pulse forming in linear transformer driver (LTD) electron beam generator;Frontiers in Physics;2024-01-11

2. A 2.48 pJ/pulse Low-Power IR-UWB Transmitter in 0.18-μm CMOS Process;Journal of Circuits, Systems and Computers;2023-09-14

3. Optimization Research of Pulse Power Device Based on Road-Field-Particle Collaborative Simulation;IEEE Transactions on Plasma Science;2023-08

4. Challenges and Perspectives on Impulse Radio-Ultra-Wideband Transceivers for Neural Recording Applications;IEEE Transactions on Biomedical Circuits and Systems;2023

5. A novel method for narrow impulse capture and parameter monitoring on the basic of microwave photonics;2022 IEEE Conference on Antenna Measurements and Applications (CAMA);2022-12-14

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