High Efficiency Ku-Band 13 W GaN HEMT HPA
Author:
Affiliation:
1. National University of Singapore,Singapore,Singapore,117583
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9977438/9977447/09977587.pdf?arnumber=9977587
Reference11 articles.
1. A 0.1–1.1 GHz inductorless differential LNA with double g m -boosting and positive feedback
2. An ll-W Ka-Band GaN HPA MMIC Based on Self-Developed Empirical Model;yan;IEEE Asia-Pac Microwave Conf,2020
3. A high efficiency 10W MMIC PA for K-b and satellite communications
4. A 0.1–3.4 GHz LNA with multiple feedback and current-reuse technique based on 0.13-?m SO1 CMOS;shi;Proc IEEE MTT-S Inter Wireless Symp,2019
5. High-Power Ka/Ku Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design
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1. Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25- μm GaN HEMT Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-08
2. A Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
3. A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology;IEEE Microwave and Wireless Technology Letters;2024-01
4. A Modified Space Mapping Algorithm-Aided Method for High-Performance LNA MMIC Design;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
5. The Application of Aggressive Space Mapping Algorithm in mmWave Power Amplifier Design;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
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