Electrical endpoint detection of VLSI contact plasma etching-Reference-Cited by-同舟云学术

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Electrical endpoint detection of VLSI contact plasma etching

Published:1984-12 Issue:12 Volume:5 Page:514-517
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang G.,McVittie J.P.,Walker J.T.,Dutton R.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31921/01484385.pdf?arnumber=1484385

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching: Endpoint Detection;Encyclopedia of Plasma Technology;2016-12-12

2. Analysis and modeling of the optical endpoint signal for precision etching;Journal of the Korean Physical Society;2013-01

3. Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-09

4. Sensitive End-Point Detection for Dielectric Etch;Journal of The Electrochemical Society;2001

5. New and simple optical method forinsituetch rate determination and endpoint detection;Applied Physics Letters;1989-10-02

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