Fabrication of the InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process-Reference-Cited by-同舟云学术

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Fabrication of the InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

Published:2009-08 Issue:16 Volume:21 Page:1142-1144
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Chia-Feng Lin ,Chung-Chieh Yang ,Jui-Fen Chien ,Chun-Min Lin ,Kuei-Ting Chen ,Yen S.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/5173590/05061513.pdf?arnumber=5061513

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED;AIP Conference Proceedings;2017

2. Experimental study of light output power for vertical GaN-based light-emitting diodes with various textured surface and thickness of GaN layer;AIP Advances;2012-06

3. Power enhancement of 380 nm UV-LED with hexagonal pyramid structures by AlN sacrificial layer;SPIE Proceedings;2012-02-09

4. Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure;IEEE Electron Device Letters;2010-12

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