Area Efficient Integrated Gate Drivers Based on High-Voltage Charge Storing-Reference-Cited by-同舟云学术

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Area Efficient Integrated Gate Drivers Based on High-Voltage Charge Storing

Published:2015-07 Issue:7 Volume:50 Page:1550-1559
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Seidel Achim,Costa Marco Salvatore,Joos Joachim,Wicht Bernhard

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7131594/07073656.pdf?arnumber=7073656

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 24-V-Input Highly Integrated Interleaved-Inductor Multiple Step-Down Hybrid DC–DC Converter With Inherent Current Equalization Characteristics;IEEE Journal of Solid-State Circuits;2024-09

2. A High-Speed Dual-NMOSFETs Output Stage Buffer with Charge-Transferring Bootstrap Circuit for GaN-Based DToF LiDAR Application;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Integrated Ultrasound Pulser for NDT Applications;2023 IEEE 11th International Conference on Systems and Control (ICSC);2023-12-18

4. Floating-Domain Integrated GaN Driver Techniques for DC–DC Converters: A Review;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-09

5. A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity;IEEE Transactions on Industrial Electronics;2023-01

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