A 190-GHz VCO With 20.7% Tuning Range Employing an Active Mode Switching Block in a 130 nm SiGe BiCMOS-Reference-Cited by-同舟云学术

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A 190-GHz VCO With 20.7% Tuning Range Employing an Active Mode Switching Block in a 130 nm SiGe BiCMOS

Published:2017-08 Issue:8 Volume:52 Page:2094-2104
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kananizadeh Rouzbeh^ORCID,Momeni Omeed

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7987836/07902160.pdf?arnumber=7902160

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Highly Efficient 165-GHz 4FSK 17-Gb/s Transceiver System With Frequency Overlapping Architecture in 65-nm CMOS;IEEE Journal of Solid-State Circuits;2023-11

2. A Highly Efficient E-Band CMOS Frequency Tripler With a Third Harmonic Boosting Technique;IEEE Microwave and Wireless Technology Letters;2023-08

3. Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources;International Journal of Circuit Theory and Applications;2023-07-27

4. A 151.2-175.8 GHz Low Phase Noise LO Generator with Harmonic Enhancement Technique;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

5. On-chip SRR and CSRR for millimeter-wave integrated systems: Review and applications;Microelectronics Journal;2023-01

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