GaN based high electron mobility transistors for microwave and RF control applications
Author:
Drozdovski N.,Caverly R.
Cited by
1 articles.
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1. TCAD Simulation Analysis on Gate Structure and Trap Effect of GaN-Based Junctionless FinFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27