Correction to “InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies” [Feb 08 271-286]
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/5/4472076/04457923.pdf?arnumber=4457923
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers;Journal of Crystal Growth;2015-09
2. Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region;Applied Physics Express;2012-01-25
3. High-Speed InP-Based Heterojunction Bipolar Transistors;Comprehensive Semiconductor Science and Technology;2011
4. The progress towards terahertz quantum cascade lasers on silicon substrates;Laser & Photonics Reviews;2010-06-07
5. Height-selective etching for regrowth of self-aligned contacts using MBE;Journal of Crystal Growth;2009-03
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