Simulation of RTD Material System-Reference-Cited by-同舟云学术

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Simulation of RTD Material System

Published:2023-04-25 Issue: Volume: Page:
ISSN:
Container-title:2023 24th International Vacuum Electronics Conference (IVEC)
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Author:

Rong Weiming¹,Zhang Ping¹,Yu Guohao²,Wang Shaomeng¹,Zhang Bingliang²,Gong Yubin¹

Affiliation:

1. University of Electronic Science and Technology of China,National Key Laboratory of Science and Technology on Vacuum Electronics,Chengdu,China

2. Suzhou Institute of Nano-Tech and Nano-Bionics,Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10156868/10156872/10157268.pdf?arnumber=10157268

Reference6 articles.

1. Development and future prospects of terahertz technology

2. The effect of internal fields on tunneling current in strained GaN/AlxGa1−x N(0001) structures

3. Growth of III–V semiconductors by molecular beam epitaxy and their properties

4. THz imaging and sensing for security applications-explosives[J];langeaxelberlin;Materials Testing,2008

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