Effect of emitter contact materials on high-performance vertical p-n-p transistors-Reference-Cited by-同舟云学术

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Effect of emitter contact materials on high-performance vertical p-n-p transistors

Published:1991-06 Issue:6 Volume:12 Page:261-263
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ratanaphanyarat S.,Rausch W.,Smadi M.,Saccamango M.J.,Mei S.N.,Chu S.-F.,Ronsheim P.A.,Chu J.O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2693/00082054.pdf?arnumber=82054

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations;IEEE Transactions on Electron Devices;2010-06

2. 1∕f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors;Journal of Applied Physics;2005-04-15

3. Charge‐injection theory of bipolar junction transistors;Journal of Applied Physics;1994-10

4. Hot-carrier effects in polysilicon emitter vertical PNP and NPN transistors;Microelectronics Reliability;1993-11

5. Current reversals in p−n−p transistors;Solid-State Electronics;1992-12

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