Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser-Reference-Cited by-同舟云学术

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Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser

Published:2010-04 Issue:4 Volume:31 Page:308-310
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Baiano A.,Ishihara R.,van der Cingel J.,Beenakker K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5437354/05419083.pdf?arnumber=5419083

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanowire single-crystal grain and single grain boundary silicon field effect transistors for direct electrical characterization of grain boundaries;Applied Physics Express;2023-02-01

2. Historical evolution of pulsed laser annealing for semiconductor processing;Laser Annealing Processes in Semiconductor Technology;2021

3. Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization;Japanese Journal of Applied Physics;2018-05-23

4. Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films;Advanced Materials Research;2015-07

5. High-Performance Single-Crystal-Like Strained-Silicon Nanowire Thin-Film Transistors via Continuous-Wave Laser Crystallization;IEEE Electron Device Letters;2015-04

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