Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect-Reference-Cited by-同舟云学术

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Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect

Published:2010-07 Issue:7 Volume:31 Page:650-652
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Paul Sujata,Yeh Frank,Maitra Kingsuk,Chung-Hsun Lin ,Kerber Andreas,Kulkarni Pranita,Jagannathan Hemanth,Basker Veeraraghavan S,Miller Robert J,Huiming Bu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5492327/05484648.pdf?arnumber=5484648

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical study of the influence of LER and MGG in SOI MOSFET;Semiconductor Science and Technology;2014-02-20

2. Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs;IEEE Transactions on Electron Devices;2014-02

3. 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors;IEEE Transactions on Electron Devices;2013-05

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