Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide-Reference-Cited by-同舟云学术

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Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Published:2010-07 Issue:7 Volume:31 Page:710-712
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Okamoto Dai,Yano Hiroshi,Hirata Kenji,Hatayama Tomoaki,Fuyuki Takashi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5492327/05464297.pdf?arnumber=5464297

Cited by 251 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs;Solid State Phenomena;2024-08-22

2. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

3. Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃;Applied Physics Express;2024-08-01

4. Investigating the mechanism of SiO₂/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO₂;Applied Physics Express;2024-07-31

5. Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction;AIP Advances;2024-07-01

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