Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology-Reference-Cited by-同舟云学术

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Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

Published:2022-12-14 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Conference on Antenna Measurements and Applications (CAMA)
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Author:

Wen Han¹,Zhou Xinyu²,Feng Wenjie³,Che Wenquan¹,Xue Quan¹

Affiliation:

1. South China University of Technology,School of Electronic and Information Engineering,Guangzhou,China

2. Stanford University,Department of Electrical Engineering,Stanford,CA,USA

3. South China University of Technology,Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,Guangzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10002416/10002429/10002617.pdf?arnumber=10002617

Reference51 articles.

1. Broadband High-Efficiency Quasi-Class-J Power Amplifier Based on Nonlinear Output Capacitance Effect

2. Class-F Power Amplifier with Dual-Mode Filtering Response

3. A Linear Envelope Tracking Power Amplifier with Varactor-based Phase Compensation Network

4. Generalized Class-E Power Amplifier with Shunt Filter at Any Duty Ratio

5. A New Method to Design Highly Efficient C-band Harmonic-tuned Power Amplifiers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C/Ka Concurrent Dual-Band GaN MMIC Based on Shorted Quarter-Wavelength Line Topology;IEEE Journal of Microwaves;2024-07

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