SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project-Reference-Cited by-同舟云学术

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SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM
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Author:

Bock J.,Aufinger K.,Boguth S.,Dahl C.,Knapp H.,Liebl W.,Manger D.,Meister T. F.,Pribil A.,Wursthorn J.,Lachner R.,Heinemann B.,Rucker H.,Fox A.,Barth R.,Fischer G.,Marschmeyer S.,Schmidt D.,Trusch A.,Wipf C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7329075/7340543/07340549.pdf?arnumber=7340549

Cited by 85 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Investigation of Coupling Mechanisms for Efficient High Power and Low Phase Noise E-Band Quadrature VCOs in 130nm SiGe;IEEE Journal of Microwaves;2024-04

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