Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon-Reference-Cited by-同舟云学术

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Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon

Published:1985 Issue: Volume: Page:
ISSN:
Container-title:1985 International Electron Devices Meeting
language:
Short-container-title:

Author:

del Alamo J.,Swirhun S.,Swanson R.M.

Publisher

IRE

Link

http://xplorestaging.ieee.org/ielx5/9951/31947/01485504.pdf?arnumber=1485504

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