Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage-Reference-Cited by-同舟云学术

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Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage

Published:2020-07-20 Issue: Volume: Page:
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Container-title:2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Li Xiao-Xi,Chen Jin-Xin,Huang Wei,Ji Zhigang,Feng Zhi-Hong,Wu Su-Zhen,Xiao Zhi-Qiang,Lu Hong-Liang

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9260488/9260588/09261085.pdf?arnumber=9261085

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation;Applied Physics Letters;2022-10-03

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