A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of $\pm 0.45{{}^{\circ}\mathsf{C}}(3\sigma)$ from -50°C to 180°C and a Resolution-FoM of 7.2pJ.K<sup>2</sup> at 150°C-Reference-Cited by-同舟云学术

A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of $\pm 0.45{{}^{\circ}\mathsf{C}}(3\sigma)$ from -50°C to 180°C and a Resolution-FoM of 7.2pJ.K² at 150°C

Published:2022-02-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Wang Bo¹,Law Man-Kay²,Bermak Amine¹

Affiliation:

1. Hamad Bin Khalifa University,Doha,Qatar

2. University of Macau,Macau,China

Funder

Qatar National Research Fund

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731647.pdf?arnumber=9731647

Reference6 articles.

1. A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

2. A 40µW CMOS Temperature Sensor with an Inaccuracy of ±0.4°C ($3\sigma$) from ?55°C to 200°C;souri;ESSCIRC,2013

3. A Micropower Battery Current Sensor with ±0.03% ($3\sigma$) Inaccuracy from ?40 to +85°C;shalmany;ISSCC,2013

4. An 18.75µW Dynamic-Distributing-Bias Temperature Sensor with 0.87°C ($3\sigma$) Untrimmed Inaccuracy and 0.00946mm2 Area;hsu;ISSCC,2017

5. A 0.12mm2 Wien-Bridge Temperature Sensor with 0.1°C ($3\sigma$) Inaccuracy from ?40°C to 180°C;pan;ISSCC,2019

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