A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology-Reference-Cited by-同舟云学术

A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology

Published:2022-02-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Callender Steven¹,Whitcombe Amy²,Agrawal Abhishek¹,Bhat Ritesh¹,Rahman Mustafijur³,Lee Chun C.⁴,Sagazio Peter¹,Dogiamis Georgios⁵,Carlton Brent¹,Chakravorti Mark¹,Pellerano Stefano¹,Hull Christopher¹

Affiliation:

1. Intel,Hillsboro,OR

2. Intel,Santa Clara,CA

3. IIT Delhi,New Delhi,India

4. Nebula Microsystems,Richardson,TX

5. Intel,Chandler,AZ

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731663.pdf?arnumber=9731663

Reference7 articles.

1. A 112 Gb/s PAM-4 56 Gb/s NRZ Reconfigurable Transmitter With Three-Tap FFE in 10-nm FinFET

2. A Fully Integrated, Dual Channel, Flip Chip Packaged 113 GHz Transceiver in 28nm CMOS supporting an 80 Gb/s Wireless Link

3. 9.7 A Scalable 71-to-76GHz 64-Element Phased-Array Transceiver Module with 2×2 Direct-Conversion IC in 22nm FinFET CMOS Technology

4. An Instantaneously Broadband Ultra-Compact Highly Linear PA with Compensated Distributed-Balun Output Network Achieving >17.8dBm P1 dB and >36.6% PAEP1 dB over 24 to 40GHz and Continuously Supporting 64-/256-QAM 5G NR Signals over 24 to 42GHz;wang;ISSCC,2020

5. A high-swing complementary class-C VCO

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