A 0.65V 1316µm<sup>2</sup>Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS-Reference-Cited by-同舟云学术

A 0.65V 1316µm²Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving O.16nJ.%2-Accuracy FoM in 5nm FinFET CMOS

Published:2022-02-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Park Junghyun¹,Kim Jooseong¹,Kim Kwangho¹,Yang Jun-Hyeok¹,Choi Michael¹,Shin Jongshin¹

Affiliation:

1. Samsung Electronics,Gyeonggi,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731766.pdf?arnumber=9731766

Reference5 articles.

1. A 0.53pJ.K2 7000µm2 Resistor-Based Temperature Sensor with an Inaccuracy of ±0.35°C (3?) in 65nm CMOS;choi;ISSCC Dig Tech Papers,2018

2. A 0.0088mm2 Resistor-Based Temperature Sensor Achieving 92fJ.K2 FoM in 65nm CMOS;khashaba;ISSCC Dig Tech Papers,2020

3. A Highly Digital 2210µm2 Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3°C (3?) from -55°C to 125°C in 65nm CMOS;angevare;ISSCC Dig Tech Papers,2021

4. 35.1 An Octa-Core 2.8/2GHz Dual-Gear Sensor-Assisted High-Speed and Power-Efficient CPU in 7nm FinFET 5G Smartphone SoC

5. An 8b subthreshold hybrid thermal sensor with ±1.07°C inaccuracy and single-element remote-sensing technique in 22nm FinFET

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