23.5 A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from −55°C to 125°C
Author:
Affiliation:
1. Delft University of Technology,Delft,The Netherlands
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067695.pdf?arnumber=10067695
Reference6 articles.
1. An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS
2. A DTMOST-based Temperature Sensor with 3? Inaccuracy of ±0.9°C for Self-Refresh Control in 28nm Mobile DRAM;park;IEEE CICC,2020
3. A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3?) from -15°C to 85°C;someya;IEEE VLSIC,2022
4. A No-Trim, Scaling-Friendly Thermal Sensor in 16nm FinFET Using Bulk Diodes as Sensing Elements
5. A 0.85V 600nW All-CMOS Temperature Sensor with an Inaccuracy of ±0.4°C (3?) from -40 to 125°C;souri;ISSCC,2014
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2. 3.7 A β-Compensated NPN-Based Temperature Sensor with ±0.1°C (3σ) Inaccuracy from -55°C to 125°C and a 200fJ·K2 Resolution FoM;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
3. 3.4 A 14b 98Hz-to-5.9kHz 1.7-to-50.8 μ W BW/Power Scalable Sensor Interface with a Dynamic Bandgap Reference and an Untrimmed Gain Error of ± 0.26 % from −40°C to 125°C;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
4. An 11 Nw, +0.41℃ /-0.38℃ Inaccuracy Self-Biased Cmos Temperature Sensor at Sub-Thermal Drain Voltage;2024
5. A Comprehensive Methodology for Optimizing Read-Out Timing and Reference DAC Offset in High Frame Rate Image Sensing Systems;Sensors;2023-08-09
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