In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets-Reference-Cited by-同舟云学术

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In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets

Published:2005-02 Issue:1 Volume:18 Page:112-121
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:en
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Rying E.A.,Ozturk M.C.,Bilbro G.L.,Lu J.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/66/30318/01393051.pdf?arnumber=1393051

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes;Journal of Vacuum Science & Technology B;2024-06-26

2. A Bayesian parallel site methodology with an application to uniformity modeling in semiconductor manufacturing;IIE Transactions;2009-07-21

3. Distributed Sensing for Quality and Productivity Improvements;IEEE Transactions on Automation Science and Engineering;2006-10

4. Data reduction for multiple functional data with class information;International Journal of Production Research;2006-07-15

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