Improvement of Surge Current Capability in SBD-embedded SiC MOSFETs by Introducing Trigger p-n Diodes
Author:
Affiliation:
1. Corporate Research & Development Center, Toshiba Corporation,Kawasaki,Japan
2. Toshiba Electronic Devices & Storage Corporation,Hyogo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147726.pdf?arnumber=10147726
Reference8 articles.
1. A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT;storasta;Proc ISPSD'10,2010
2. Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs
3. 6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module
4. Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs;kawahara;Mater Sci Forum,2017
5. Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode;Micromachines;2024-07-22
2. Improvement of Surge Current Capability of 3.3 kV SBD-Embedded SiC-MOSFET Module;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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