Enhancement-mode GaN HEMT power electronic device with low specific on resistance
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8233062/8245916/08246005.pdf?arnumber=8246005
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on a p-GaN HEMT with composite passivation and composite barrier layers;Semiconductor Science and Technology;2024-07-04
2. An Approach to GaN HEMT Modeling Based on Genetic Algorithm;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Predictive-Based Delay Compensation for Classical VOC Control with Enhanced Transient Performance in Grid-Connected Inverters;2023 3rd International Conference on Intelligent Power and Systems (ICIPS);2023-10-20
4. Analysis of the Stress Wave Characteristic Parameter of Cascode GaN HEMT;IEEE Sensors Journal;2022-11-01
5. Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications;IEEE Transactions on Device and Materials Reliability;2021-03
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