Impact of Work Function and Silicon Thickness on 3-D Analytical Model of Gate All Around Field Effect Transistor
Author:
Affiliation:
1. I.K. Gujaral Punjab Technical University,Jalandhar,Punjab,India
2. University Institute of Engineering & Technology,Rohtak,Haryana,India
3. Vaish College of Engineering,Rohtak,Haryana,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9716239/9716227/09716517.pdf?arnumber=9716517
Reference22 articles.
1. Silicon-Insulator 'Gate-All-Around Device;colinge;Electron Devices Meeting 1990 IEDM '90 Technical Digest International,0
2. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
3. High Performance Silicon Nanowire Field Effect Transistors
4. Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs
5. An Oxide/Silicon Core/Shell Nanowire Metal-Oxide Semiconductor Field Effect Transistor;zhang;Journal of China Physis B,2010
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