In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors and HEMT's grown by MOCVD on GaAs substrates-Reference-Cited by-同舟云学术

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In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors and HEMT's grown by MOCVD on GaAs substrates

Published:1992 Issue:12 Volume:39 Page:2817-2818
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hong W.P.,Bhat R.,Nguyen C.,Koza M.,Caneau C.,Chang G.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/4389/00168735.pdf?arnumber=168735

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallisation of magnetron sputtered amorphous Si1−xCxfilms (x= 1/3) studied by grazing incidence X-ray diffractometry;Philosophical Magazine;2010-10-14

2. Si diffusion in magnetron sputtered silicon carbide films deposited on silicon and carbon substrates;Thin Solid Films;2009-11

3. Comparative study of trap-limited hydrogen diffusion in amorphous SiC, Si0.66C0.33N1.33, and SiN1.33films;Journal of Physics: Condensed Matter;2006-05-26

4. Crystallization kinetics of amorphous SiC films: Influence of substrate;Applied Surface Science;2005-12

5. Reducing dark current in a high-speed si-based interdigitated trench-electrode msm photodetector;IEEE Transactions on Electron Devices;2003-05

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