Wide-band transimpedance amplifiers using AlGaAs/In/sub x/Ga/sub 1-x/As pseudomorphic 2-DEG FET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx4/4/15559/00720404.pdf?arnumber=720404
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Notice of Violation of IEEE Publication Principles A 54 dBOmega + 42 dB 10 Gb/s SiGe transimpedance-limiting amplifier using bootstrap photodiode capacitance neutralization and vertical threshold adjustment;IEEE Journal of Solid-State Circuits;2007-09
3. Notice of Violation of IEEE Publication Principles - A 10Gb/s SiGe transimpedance amplifier using a pseudo-differential input stage and a modified Cherry-Hooper amplifier;2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525);2004
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5. A 40-Gb/s preamplifier using AlGaAs/InGaAs HBTs with regrown base contacts;IEEE Journal of Solid-State Circuits;1999
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