Filament formation and the final resistance modeling in amorphous-silicon vertical programmable element
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/6849/00277334.pdf?arnumber=277334
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Filamentary bipolar electric pulse induced resistance switching in amorphous silicon resistive random access memory;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-05
2. A Novel Anti-Fuse Based on (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) Thin Films;Applied Mechanics and Materials;2012-06
3. Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor;Applied Physics Express;2009-04-24
4. A Thermal Model for the Initiation of Programming in Metal‐to‐Metal Amorphous‐Silicon Antifuses;Journal of The Electrochemical Society;1999-04-01
5. Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses;Journal of Applied Physics;1998-11
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