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Simulation Study of a Novel Snapback-Free and Low Turn-Off Loss Reverse-Conducting IGBT With Controllable Trench Gate

  • Published:2018-02 Issue:2 Volume:39 Page:252-255
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Wei JieORCID,Luo XiaorongORCID,Huang Linhua,Zhang Bo

Funder

National Natural Science Foundation of China

Fundamental Research Funds for Central Universities

13th Five-year Plan for Microelectronics Advanced Research Program

National Defense Basic Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RC-IGBT snapback suppression using silicon germanium collector regions;Journal of Power Electronics;2024-07-18

2. A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS;IEEE Transactions on Electron Devices;2024-06

3. A Low Loss SGT IGBT Design;2024 4th International Conference on Electronics, Circuits and Information Engineering (ECIE);2024-05-24

4. Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position;Microelectronics Journal;2024-05

5. An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection;IEEE Transactions on Electron Devices;2023-12
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