Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties
Author:
Funder
DEFIS-RF Project, France
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/7990274/07953660.pdf?arnumber=7953660
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4. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14
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