A 26-38GHz Ultra-Wideband Balanced Frequency Doubler in 0.15µ m GaAs pHEMT Process
Author:
Affiliation:
1. School of Microelectronicsline, Fudan University,State Key Laboratory of ASIC and System,Shanghai,China
2. University of Macau,State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST,Macao,China
Funder
National Key Research and Development Program of China
NSFC
Natural Science Foundation of Shanghai
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10090225/10090247/10090344.pdf?arnumber=10090344
Reference11 articles.
1. A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS
2. A 3–50 GHz Ultra-Wideband PHEMT MMIC Balanced Frequency Doubler
3. A Sub-6G SP32T Single-Chip Switch with Nanosecond Switching Speed for 5G Applications in 0.25 μm GaAs Technology
4. A GaAs Frequency Doubler with 38 dB fundamental rejection from 22 to 40 GHz using a Transformer Balun;chakraborty;2019 14th European Microwave Integrated Circuits Conference (EuMIC),0
5. A Low-Power, High-Suppression V-band Frequency Doubler in 0.13 $\mu$m CMOS
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