High Linearity BJT-Based Time-Domain CMOS Temperature Sensor
Author:
Affiliation:
1. University of Macau,State Key Laboratory of Analog and Mixed-Signal, VLSI, IME and FST-ECE,Macao,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10090225/10090247/10090377.pdf?arnumber=10090377
Reference14 articles.
1. A Charge Balancing 1450 um2 PNP-Based Thermal Sensor for Dense Thermal Monitoring
2. An On-Chip Thermal Monitoring System With a Temperature Sensing Area of 52 $\mu$ m2 in 180-nm CMOS
3. A BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy From −40 °C to 125 °C
4. A 1.2V Self-Referenced Temperature Sensor With a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range
5. An Ultralow Power Time-Domain Temperature Sensor With Time-Domain Delta–Sigma TDC
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